Fully Self-consistent Quantum Mechanical Device Simulator for Modeling P Channel Strained Sige Mosfets

Over the past three decades, silicon MOS-based integrated circuits, such as microprocessors, have consistently delivered greater functionality at higher performance and lower cost per function. An empirical observation called Moore’s Law [1] is commonly quoted to highlight the exponential rates of increase in circuit speed and integration density as MOS transistors have scaled down in channel length. As devices have gotten smaller, faster and cheaper, demand for higher device performance has increased because computer systems have grown more widespread and complex.